kw.\*:("TELLURURE MERCURE")
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FAR INFRARED MAGNETOOPTICAL EFFECTS IN HGTE.UCHIDA SI; TANAKA S.1976; J. PHYS. SOC. JAP.; JAP.; DA. 1976; VOL. 40; NO 1; PP. 118-127; BIBL. 15 REF.Article
THE OBSERVATION OF LO PHONONS IN HGSE AND HGTE BY ELECTRON TUNNELING.NIEWODNICZANSKA ZAWADZKA J; RAULUSZKIEWICZ J.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 74; NO 2; PP. K93-K95; BIBL. 3 REF.Article
NONPOLAR SCATTERING OF ELECTRONS BY OPTICAL PHONONS IN SMALL-GAP SEMICONDUCTORS.BOGUSLAWSKI P.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 70; NO 1; PP. 53-62; ABS. ALLEM.; BIBL. 22 REF.Article
ELECTRON MOBILITY AND THERMOELECTRIC POWER IN PURE MERCURY TELLURIDE.WALUKIEWICZ W.1976; J. PHYS. C; G.B.; DA. 1976; VOL. 9; NO 10; PP. 1945-1954; BIBL. 25 REF.Article
FUNDAMENTAL REFLECTION OF CDXHG1-XTE CRYSTALS IN THE 1.9 TO 3.1 EV ENERGY RANGE.KISIEL A; PODGORNY M; RODZIK A et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 71; NO 2; PP. 457-460; ABS. ALLEM.; BIBL. 21 REF.Article
MAGNETIC-FIELD-INDUCED ENERGY GAP IN HGTE OBSERVED IN TRANSPORT MEASUREMENTS.BYSZEWSKI P; DZIUBA EZ; GALAZKA RR et al.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 71; NO 1; PP. 117-124; ABS. ALLEM.; BIBL. 10 REF.Article
PROPRIETES DES COUCHES EPITAXIQUES DE HGTE DEPOSEES A PARTIR DE LA PHASE VAPEUR SUR CDTEALEKSEENKO LI; BILEN'KIJ BF; GRECHUKH ZG et al.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 7; PP. 1215-1218; BIBL. 12 REF.Article
OSCILLATIONS QUANTIQUES DES COEFFICIENTS GALVANOMAGNETIQUES DE HGTE-N A BASSES TEMPERATURESIVANOV OMSKIJ VI; KONSTANTINOVA NN; PARFEN'EV RV et al.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 4; PP. 715-724; BIBL. 19 REF.Serial Issue
TRIPLAGE DE FREQUENCE ET AUTO-ACTION D'UNE ONDE ELECTROMAGNETIQUE INTENSE DANS LES SEMICONDUCTEURS A BANDE INTERDITE NULLEGENKIN GM; ZIL'BERBERG VV.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 5; PP. 841-844; BIBL. 11 REF.Article
THE ELASTIC BEHAVIOUR OF MERCURY TELLURIDE.COTTAM RI; SAUNDERS GA.1975; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1975; VOL. 36; NO 5; PP. 187-192; BIBL. 15 REF.Article
ULTRASONIC ATTENUATION IN HGTE FROM 2 TO 300 K.COTTAM RI; SAUNDERS GA.1975; PHILOS. MAG.; G.B.; DA. 1975; VOL. 32; NO 6; PP. 1231-1243; BIBL. 13 REF.Article
PROPRIETES OPTIQUES DU TELLURURE DE MERCURE DOPE DE TYPE N.BURGOS ME.1974; ; S.L.; DA. 1974; PP. 1-50; H.T. 24; BIBL. 2 P. 1/2; (THESE DOCT. 3E. CYCLE, SPEC. PHYS., MENTION ELECTRON. SOLIDES PARTICULES; PARIS VI)Thesis
UNIAXIAL STRESS EFFECT OF MAGNETOOPTICAL PROPERTIES OF HGTE.YOSHIZAKI R; TANAKA S.1977; J. PHYS. SOC. JAP.; JAP.; DA. 1977; VOL. 42; NO 5; PP. 1601-1608; BIBL. 16 REF.Article
EFFET DE "GOULET ETROIT" DANS LES SEMICONDUCTEURS SANS BANDE INTERDITE AUX BASSES TEMPERATURESMIKHEEV VM; POMORTSEV RV.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 5; PP. 908-913; BIBL. 5 REF.Article
MOESSBAUER F FACTOR FOR 35.5 KEV-TE125 TRANSITION IN ZINC-BLENDE TYPE CRYSTALS.PRABHAKARAN AK; RAJU SB; MENDIRATTA RG et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 4; PP. 407-408; BIBL. 7 REF.Article
ELECTRICAL PROPERTIES OF VACUUM DEPOSITED HGTE FILMS.BARUA DC; BARUA K.1974; INDIAN J. PHYS.; INDIA; DA. 1974; VOL. 48; NO 4; PP. 332-339; BIBL. 10 REF.Article
ANISOTROPIC EFFECTS INDUCED BY MAGNETIC FIELD IN ZERO-GAP SEMICONDUCTORS.ZAWADZKI W; KOWALSKI J.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 2; PP. 303-306; ABS. FR.; BIBL. 16 REF.Article
IDENTIFICATION DU SPECTRE D'ABSORPTION DE HG TE DANS LE CHAMP MAGNETIQUEGEL'MONT BL; GOLUBEV VG; IVANOV OMSKIJ VI et al.1979; FIZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 4; PP. 1084-1090; BIBL. 12 REF.Article
CHEMICAL SHIFT OF NMR IN HGTE, CDTE AND THEIR ALLOYS.WILLIG A; SAPOVAL B; LEIBLER K et al.1976; J. PHYS. C; G.B.; DA. 1976; VOL. 9; NO 10; PP. 1981-1989; BIBL. 15 REF.Article
ELASTIC PROPERTIES AND IONICITY OF ZERO-GAP SEMICONDUCTORS.KUMAZAKI K.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 2; PP. 615-623; ABS. FR.; BIBL. 31 REF.Article
RESONANT SPIN-OPTIC-PHONON INTERACTION IN SMALL-GAP SEMICONDUCTORS.KACMAN P; ZAWADZKI W.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 8; PP. 945-948; BIBL. 20 REF.Article
ELECTRON-ENERGY-LOSS STUDY OF THE MERCURY CHALCOGENIDES.KATONAK TT; HENGEHOLD RL.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 10; PP. 4294-4300; BIBL. 16 REF.Article
TRANSPORT PROPERTY OF ZERO-GAP SEMICONDUCTORS UNDER TENSILE STRESS.LIU L; LEUNG W.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 2336-2345; BIBL. 20 REF.Article
ANREICHERUNG VON INDIUM AN PSEUDOPHASENGRENZEN ZWISCHEN IN-DOTIERTEN HALBLEITERN = ENRICHISSEMENT IN INDIUM A LA LIMITE DE LA PSEUDOPHASE ENTRE SEMICONDUCTEURS DOPES AVEC INLEUTE V; FLOETOTTO B; SCHMIDTKE HM et al.1980; BER. BUNSENGES. PHYS. CHEM.; ISSN 0005-9021; DEU; DA. 1980; VOL. 84; NO 3; PP. 222-227; ABS. ENG; BIBL. 5 REF.Article
EFFECTS OF ANNEALING ON THE ELECTRICAL PROPERTIES OF HGTE CRYSTALS.OKAZAKI T; SHOGENJI K.1975; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1975; VOL. 36; NO 5; PP. 439-443; BIBL. 23 REF.Article